W/ZrNiAlCu亚稳态合金复合材料破片对RHA靶的侵彻释能特性

为研究W/ZrNiAlCu亚稳态合金复合材料破片对RHA靶板的侵彻释能特性，采用高速摄影弹道枪侵彻实验和能量方程、Avrami-Erofeev方程理论分析的方法，对破片的侵彻释能过程、侵彻规律、释能规律进行了研究。结果表明，破片在撞击并贯穿靶板的过程中激发了材料的燃烧反应，在靶板前方和后方产生了明显火光，随着撞击速度增加，火光范围增加、亮度提高；破片撞击速度、冲塞体速度的关系符合采用能量法推导的包含质量损失的破片侵彻公式，破片理论弹道极限速度为987.1 m·s?1；在实验速度范围内，材料反应效率随着冲击压力的增加而增加，与实验现象吻合。     

复合材料失效判据有效性验证方法研究

为系统地验证复合材料失效判据计算精度和有效性范围,给出了4种材料体系、6种铺层形式的层合板在单轴、双轴载荷下的失效试验数据,用以评估复合材料失效判据在单向层合板失效包线、多向层合板初始失效包线、多向层合板最终失效包线、层合板变形及层合板的破坏特性等五个方面的预测能力。并根据验证方法和有效性评估策略对失效判据计算精度进行量化考核,给出了失效判据在五个层面上的计算精度。     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

Yb3+掺杂稀土钽铌酸盐的晶体场从头计算研究

Yb³⁺掺杂晶体材料是重要的激光材料,在超短脉冲激光、大功率激光等领域有重要应用前景,但长期以来很难通过实验拟合确定Yb3+晶体场参数,尤其是低对称体系,从头计算是解决此问题的重要途经.本文介绍了适合计算稀土离子掺杂晶体的从头计算DV-Xα方法和有效哈密顿量模型,用该方法计算了Yb³⁺掺杂M型和M'型钽铌酸盐的晶场参数和旋轨耦合参数,得到的能级结构和实验能很好地符合,并发现了Yb³⁺掺杂钽铌酸盐的晶场强度参数随稀土原子序数呈现规律变化.表明结合DV-Xα计算和有效哈密顿量方法是计算Yb³⁺掺杂低对称钽铌酸盐晶体场的有效途径,结果显示Yb3+掺杂钽铌酸盐晶体有望成为新型全固态激光工作物质.     

消光式核壳二聚体传感器的设计与光谱特性分析

根据ITO/Au纳米核壳二聚体粒子在生物医学领域的应用合理性,设计了一种实时检测生物液体的核壳二聚体探针消光式传感器;由偶极子理论推导出输出波长与外界环境折射率关系;利用MATLAB设计ITO/Au纳米核壳二聚体粒子结构;采用软件DDSCAT7.3结合离散偶极近似法,利用二聚体有效半径模拟计算了300~950nm可见光到红外光波段不同核壳比、二聚体间距、以及不同介质折射率的消光光谱;根据传感芯片折射率与偶极共振、耦合八级共振的响应关系得出ITO/Au二聚体的折射率灵敏特性。与传统Ag/Au核壳纳米粒子相比,ITO/Au纳米核壳二聚体结构引入了可作为传感芯片灵敏性自参考参数的耦合八级共振峰,同时ITO/Au二聚体结构的折射率灵敏度可达到419nm/RIU。这些工作及其结果对制作消光式传感器具有重要的意义。     

激光雷达辅助驾驶道路参数计算方法研究

针对特定场景辅助驾驶的需求，构建道路场景车载激光雷达三维扫描系统，并设计基于三维激光点云的道路参数提取与计算方法，包括路面宽度、横杆或桥梁或隧道限高、拐弯半径等等，为辅助判断道路的可通过性提供决策依据。测试和对比实验表明，所设计算法效果稳定、精度良好，在效率和自动化程度上有一定优势，可为辅助驾驶提供非常有益的决策参数。     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

对《关于〈一维圆环上双原子链的马德隆常数〉的解析解》的讨论

本文绘制了一维等距离子晶体的累加法、埃夫琴法和平均值法的各级马德隆常数的曲线.本文推导了二聚化直线离子晶体马德隆常数的求和式,比较了两种解析式的优劣.本文详细地推导了圆环上等距和二聚化离子晶体的马德隆常数的解析式,使读者更易于理解.本文修正了《关于〈一维圆环上双原子链的马德隆常数〉的解析解》的两个笔误,还建议修正二聚化马德隆常数的定义式,使其物理意义更明显.     

依从者平均因果效应的统计推断

本文主要研究临床试验中出现不依从现象时依从子总体的平均因果效应的统计推断。考虑在实际服药状态是二值变量且有相关性,治疗响应变量连续取值的情形,同时考虑协变量对治疗效果有影响的情况下,给出了治疗效果参数的可识别性及近似条件极大似然估计,且构造了记分检验统计量。对特殊模型进行了模拟,结果表明与理论预期一致。